高压MOSFET

产品型号

Mode

VDS(MIN)

VGS

ID(MAx)

RDS(on)

(MAx)

封装形式

LY1N60

N channel

600V

±30V

1A

9.3Ω

TO92/TO126/TO251

LY2N60

N channel

600V

±30V

2A

4.7Ω

TO251/TO252/TO251

LY4N60

N channel

600V

±30V

4A

2.6Ω

TO251/TO252/TO251

LY7N60

N channel

600V

±30V

7A

1.4Ω

TO220F

LY8N60

N channel

600V

±30V

8A

1.2Ω

TO220F

LY10N60

N channel

600V

±30V

10A

0.8Ω

TO220F

LY12N60

N channel

600V

±30V

12A

0.7Ω

TO220F

LY13003

BJT

700V

1.5A

TO126/TO92

LY1N65

N channel

650V

±30V

1A

11Ω

TO92/TO126/TO251

LY2N65

N channel

650V

±30V

2A

5Ω

TO251/TO252/TO251

LY4N65

N channel

650V

±30V

4A

2.9Ω

TO251/TO252/TO251

LY7N65

N channel

650V

±30V

7A

1.4Ω

TO220F

LY8N65

N channel

650V

±30V

8A

1.6Ω

TO220F

LY10N65

N channel

650V

±30V

10A

0.85Ω

TO220F

LY12N65

N channel

650V

±30V

12A

0.75Ω

TO220F